1N1186AR

Obsolete

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 40A DO5

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Obsolete

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 40A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N1186AR

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor 1N1186AR	40 A	10 µA	200 V	DO-5	Chassis Stud Mount	190 °C	-65 C	Reverse Polarity Standard	DO-203AB DO-5 Stud	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 64.58

General part information

Diode 200 V 40A Chassis, Stud Mount DO-5

Technical documentation and resources