VS-1N1200A

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 12A DO203AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N1200A

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	2.5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-203AA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.35 V

Part	Supplier Device Package	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Speed	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type
Vishay General Semiconductor - Diodes Division VS-1N1200A	DO-203AA	DO-4	12 A	100 V	200 C	-65 C	DO-203AA DO-4 Stud	2.5 mA	Standard Recovery >500ns	200 mA	Standard	1.35 V	Chassis Stud Mount
Vishay General Semiconductor - Diodes Division VS-1N1200RA	DO-203AA	DO-4	12 A	100 V	200 C	-65 C	DO-203AA DO-4 Stud	2.5 mA	Standard Recovery >500ns	200 mA	Reverse Polarity Standard	1.35 V	Chassis Stud Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources