CXDM3069N TR PBFREE

Obsolete

Central Semiconductor Corp

MOSFET N-CH 30V 6.9A SOT-89

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Obsolete

Central Semiconductor Corp

MOSFET N-CH 30V 6.9A SOT-89

Technical Specifications

Parameters and characteristics for this part

Specification	CXDM3069N TR PBFREE

Current - Continuous Drain (Id) @ 25°C	6.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Central Semiconductor Corp CXDM3069N TR PBFREE	30 mOhm	30 V	N-Channel	580 pF	1.2 W	MOSFET (Metal Oxide)	10 V	2.5 V	Surface Mount	TO-243AA	1.4 V	6.9 A	-55 °C	150 °C	12 V	11 nC

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General part information

N-Channel 30 V 6.9A (Ta) 1.2W (Ta) Surface Mount SOT-89

Technical documentation and resources