VS-3C16CP07L-M3

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Vishay General Semiconductor - Diodes Division

DIODE ARR SIC SCHOT 650V TO247AD

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Vishay General Semiconductor - Diodes Division

DIODE ARR SIC SCHOT 650V TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-3C16CP07L-M3

Current - Average Rectified (Io) (per Diode)	8 A
Current - Reverse Leakage @ Vr	45 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V, 8 A

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Technology	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-3C16CP07L-M3	175 ░C	-55 C	Through Hole	8 A	1 Pair Common Cathode	No Recovery Time	1.5 V 8 A	650 V	0 ns	SiC (Silicon Carbide) Schottky	TO-247AD	TO-247-3	45 µA

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General part information

Diode Array 1 Pair Common Cathode 650 V 8A (DC) Through Hole TO-247-3

Technical documentation and resources