MBR12080CTR

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GeneSiC Semiconductor

DIODE MOD SCHOTT 80V 120A 2TOWER

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GeneSiC Semiconductor

DIODE MOD SCHOTT 80V 120A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR12080CTR

Current - Average Rectified (Io) (per Diode)	120 A
Current - Reverse Leakage @ Vr	3 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

Part	Speed	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Technology
GeneSiC Semiconductor MBR12080CTR	200 mA 500 ns	Twin Tower	3 mA	Chassis Mount	1 Pair Common Cathode	80 V	Twin Tower	120 A	Schottky
GeneSiC Semiconductor MBR12080CT	200 mA 500 ns	Twin Tower	3 mA	Chassis Mount	1 Pair Common Anode	80 V	Twin Tower	120 A	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 57.41

General part information

Diode Array 1 Pair Common Cathode 80 V 120A (DC) Chassis Mount Twin Tower

Technical documentation and resources