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ES1DLHRUG - MFG_DO-219AB

ES1DLHRUG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A SUB SMA

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ES1DLHRUG - MFG_DO-219AB

ES1DLHRUG

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A SUB SMA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationES1DLHRUG
Capacitance @ Vr, F10 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-219AB
QualificationAEC-Q101
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageSub SMA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3600$ 0.25
5400$ 0.23
9000$ 0.22
45000$ 0.21

Description

General part information

ES1D Series

Diode 200 V 1A Surface Mount Sub SMA

Documents

Technical documentation and resources