GBU607H

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Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 6A GBU

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Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 6A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU607H

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBU
Qualification	AEC-Q101
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	1000 V

Part	Current - Reverse Leakage @ Vr	Operating Temperature [Min]	Operating Temperature [Max]	Diode Type	Current - Average Rectified (Io)	Grade	Voltage - Peak Reverse (Max) [Max]	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Qualification	Mounting Type	Technology
Taiwan Semiconductor Corporation GBU607H	5 µA	-55 °C	150 °C	Single Phase	6 A	Automotive	1000 V	GBU	4-SIP GBU	1.1 V	AEC-Q101	Through Hole	Standard
Taiwan Semiconductor Corporation GBU607	5 µA	-55 °C	150 °C	Single Phase	6 A		1000 V	GBU	4-SIP GBU	1 V		Through Hole	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBU

Technical documentation and resources