CEDM7001VL TR PBFREE

Obsolete

Central Semiconductor Corp

MOSFET N-CH 20V 100MA SOT883VL

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Obsolete

Central Semiconductor Corp

MOSFET N-CH 20V 100MA SOT883VL

Technical Specifications

Parameters and characteristics for this part

Specification	CEDM7001VL TR PBFREE

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.57 nC
Input Capacitance (Ciss) (Max) @ Vds	9 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	SOT-883VL
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs(th) (Max) @ Id	900 mV

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Technology	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Central Semiconductor Corp CEDM7001VL TR PBFREE	100 mA	10 V	150 °C	-65 °C	SOT-883VL	900 mV	3 Ohm	20 V	0.57 nC	SC-101 SOT-883	N-Channel	MOSFET (Metal Oxide)	Surface Mount	100 mW	9 pF	4 V	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount SOT-883VL

Technical documentation and resources

No documents available