PJQ5465A_R2_00001

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5465A_R2_00001

Current - Continuous Drain (Id) @ 25°C	16 A, 5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1256 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	25 W, 2 W
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
Panjit International Inc. PJQ5465A_R2_00001	5 A 16 A	60 V	-55 °C	150 °C	P-Channel	DFN5060-8	8-PowerVDFN	48 mOhm	MOSFET (Metal Oxide)	Surface Mount	2 W 25 W	2.5 V	1256 pF	22 nC	4.5 V 10 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 5A (Ta), 16A (Tc) 2W (Ta), 25W (Tc) Surface Mount DFN5060-8

Technical documentation and resources