BAS316 RRG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 250MA SOD323

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Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 250MA SOD323

Technical Specifications

Parameters and characteristics for this part

Specification	BAS316 RRG

Capacitance @ Vr, F	1.5 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	30 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SOD-323, SC-76
Reverse Recovery Time (trr)	4 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-323
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Mounting Type	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology	Package / Case
Taiwan Semiconductor Corporation BAS316 RRG	Surface Mount	1.5 pF	1.25 V	SOD-323	4 ns	150 °C	-65 C	100 V	200 mA 500 ns	250 mA	30 nA	Standard	SC-76 SOD-323

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General part information

Diode 100 V 250mA Surface Mount SOD-323

Technical documentation and resources