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W66BP6NBHAHJ

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Winbond Electronics

IC DRAM 2GBIT LVSTL 11 100VFBGA

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W66BP6NBHAHJ

Active
Winbond Electronics

IC DRAM 2GBIT LVSTL 11 100VFBGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationW66BP6NBHAHJ
Access Time3.6 ns
Clock Frequency2.133 GHz
Memory FormatDRAM
Memory Organization128 M
Memory Size2 Gbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]105 °C
Operating Temperature [Min]-40 °C
Package / Case100-VFBGA
Supplier Device Package100-VFBGA
Supplier Device Package [x]10
Supplier Device Package [y]7.5
TechnologySDRAM - Mobile LPDDR4
Voltage - Supply [Max]1.95 V, 1.17 V
Voltage - Supply [Min]1.06 V, 1.7 V
Write Cycle Time - Word, Page18 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 208$ 3.12

Description

General part information

W66BP6 Series

SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL_11 2.133 GHz 3.6 ns 100-VFBGA (10x7.5)

Documents

Technical documentation and resources

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