2SC6010(T2MITUM,FM

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 600V 1A MSTM

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 600V 1A MSTM

Technical Specifications

Parameters and characteristics for this part

Specification	2SC6010(T2MITUM,FM

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-71
Power - Max [Max]	1 W
Supplier Device Package	MSTM
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Supplier Device Package	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage 2SC6010(T2MITUM,FM	MSTM	150 °C	600 V	100 hFE	Through Hole	NPN	1 W	1 V	SC-71	1 A	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 600 V 1 A 1 W Through Hole MSTM

Technical documentation and resources