1N6480-E3/97

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO213AB

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO213AB

Technical Specifications

Parameters and characteristics for this part

Specification	1N6480-E3/97

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-213AB, MELF (Glass)
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-213AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Technology	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division 1N6480-E3/96	Standard	1 A	DO-213AB MELF (Glass)	175 ░C	-65 C	8 pF	Surface Mount	1.1 V	DO-213AB	10 µA	Standard Recovery >500ns	200 mA	200 V
Vishay General Semiconductor - Diodes Division 1N6480-E3/97	Standard	1 A	DO-213AB MELF (Glass)	175 ░C	-65 C	8 pF	Surface Mount	1.1 V	DO-213AB	10 µA	Standard Recovery >500ns	200 mA	200 V

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General part information

Diode 200 V 1A Surface Mount DO-213AB

Technical documentation and resources