SGL60N90DG3YDTU

Obsolete

ON Semiconductor

IGBT 900V 60A 180W TO264

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Obsolete

ON Semiconductor

IGBT 900V 60A 180W TO264

Technical Specifications

Parameters and characteristics for this part

Specification	SGL60N90DG3YDTU

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	260 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	180 W
Reverse Recovery Time (trr)	1500 ns
Supplier Device Package	TO-264-3
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max)	900 V

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Power - Max [Max]	Reverse Recovery Time (trr)	Package / Case	Current - Collector Pulsed (Icm)	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor SGL60N90DG3YDTU	Through Hole	60 A	Trench	900 V	2.7 V	TO-264-3	180 W	1500 ns	TO-264-3 TO-264AA	120 A	260 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Trench 900 V 60 A 180 W Through Hole TO-264-3

Technical documentation and resources