UGF10L08G C0G

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Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A ITO220AB

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Unknown

Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	UGF10L08G C0G

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Diode Configuration	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Technology	Speed	Package / Case	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation UGF10L08G C0G	1 Pair Common Cathode	Through Hole	600 V	150 °C	-55 °C	ITO-220AB	1.7 V	25 ns	10 A	Standard	200 mA 500 ns	TO-220-3 Full Pack Isolated Tab	10 µA
Taiwan Semiconductor Corporation UGF10L08GA C0G	1 Pair Common Anode	Through Hole	600 V	150 °C	-55 °C	ITO-220AB	1.7 V	25 ns	10 A	Standard	200 mA 500 ns	TO-220-3 Full Pack Isolated Tab	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 600 V 10A Through Hole TO-220-3 Full Pack, Isolated Tab

Technical documentation and resources

No documents available