SFH154

Obsolete

ON Semiconductor

MOSFET N-CH 150V 34A TO3P

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Obsolete

ON Semiconductor

MOSFET N-CH 150V 34A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	SFH154

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	204 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	FET Type	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor SFH154	3370 pF	Through Hole	150 V	-55 °C	150 °C	110 nC	SC-65-3 TO-3P-3	4 V	30 V	TO-3P	N-Channel	MOSFET (Metal Oxide)	204 W	10 V	75 mOhm	34 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 34A (Tc) 204W (Tc) Through Hole TO-3P

Technical documentation and resources