1N4150

Obsolete

ON Semiconductor

SMALL SIGNAL DIODE DO35 50V 175C

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Obsolete

ON Semiconductor

SMALL SIGNAL DIODE DO35 50V 175C

Technical Specifications

Parameters and characteristics for this part

Specification	1N4150

Capacitance @ Vr, F	2.5 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	6 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Speed	Speed	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Package / Case	Mounting Type	Capacitance @ Vr, F	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
ON Semiconductor 1N4150	Any Speed	200 mA	175 °C	100 nA	1 V	DO-35	6 ns	200 mA	Axial DO-204AH DO-35	Through Hole	2.5 pF	Standard	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	944	$ 0.87

General part information

Diode 50 V 200mA Through Hole DO-35

Technical documentation and resources