IXFN50N120SIC

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IXYS

SICFET N-CH 1200V 47A SOT227B

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IXYS

SICFET N-CH 1200V 47A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN50N120SIC

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	SOT-227B
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	2.4 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Vgs (Max)
IXYS IXFN50N120SIC	50 mOhm	150 °C	-40 °C	2.4 V	Chassis Mount	1900 pF	47 A	N-Channel	1200 V	20 V	-5 V	SOT-227B	SOT-227-4 miniBLOC	100 nC
IXYS IXFN50N50	90 mOhm	150 °C	-55 °C	4.5 V	Chassis Mount	9400 pF	50 A	N-Channel	500 V			SOT-227B	SOT-227-4 miniBLOC		10 V	330 nC	MOSFET (Metal Oxide)	600 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 47A (Tc) Chassis Mount SOT-227B

Technical documentation and resources