PJQ5850_R2_00001

NRND

Panjit International Inc.

MOSFET 2N-CH 40V 5A/14A 8DFN

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NRND

Panjit International Inc.

MOSFET 2N-CH 40V 5A/14A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5850_R2_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5 A, 14 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	4.4 nC
Input Capacitance (Ciss) (Max) @ Vds	425 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	1.7 W, 12 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	DFN5060B-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power - Max	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Qualification	Grade
Panjit International Inc. PJQ5850_R2_00001	5 A 14 A	425 pF	MOSFET (Metal Oxide)	33 mOhm	2 N-Channel (Dual)	-55 °C	150 °C	4.4 nC	Surface Mount	1.7 W 12 W	2.5 V	DFN5060B-8	8-PowerTDFN	40 V
Panjit International Inc. PJQ5850-AU_R2_000A1	5 A 14 A	425 pF	MOSFET (Metal Oxide)	33 mOhm	2 N-Channel (Dual)	-55 °C	175 ░C	4.4 nC	Surface Mount	2 W 14.4 W	2.5 V	DFN5060B-8	8-PowerTDFN	40 V	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 5A (Ta), 14A (Tc) 1.7W (Ta), 12W (Tc) Surface Mount DFN5060B-8

Technical documentation and resources

No documents available