UGA8120HC0G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 8A TO220AC

Search across all available documentation for this part.

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	UGA8120HC0G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	70 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	2.8 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Mounting Type	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Qualification	Grade	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation UGA8120HC0G	1.2 kV	TO-220-2	Standard	Through Hole	TO-220AC	70 ns	8 A	AEC-Q101	Automotive	2.8 V	5 µA	200 mA 500 ns	175 ░C	-55 C
Taiwan Semiconductor Corporation UGA8120 C0G	1.2 kV	TO-220-2	Standard	Through Hole	TO-220AC	70 ns	8 A			2.8 V	5 µA	200 mA 500 ns	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 8A Through Hole TO-220AC

Technical documentation and resources

No documents available