AOB12N65L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 12A TO263

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 12A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB12N65L

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	278 W
Rds On (Max) @ Id, Vgs [Max]	720 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C
Alpha & Omega Semiconductor Inc. AOB12N65L	-55 °C	150 °C	30 V	10 V	720 mOhm	48 nC	Surface Mount	MOSFET (Metal Oxide)	278 W	TO-263 (D2PAK)	4.5 V	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	12 A

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