1N4385 BK PBFREE

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DO41

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 600V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4385 BK PBFREE

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	10 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr
Central Semiconductor Corp 1N4385 BK PBFREE	Through Hole	600 V	Standard Recovery >500ns	200 mA	Axial DO-204AL DO-41	Standard	1.1 V	DO-41	10 µs	1 A	200 C	-65 C	10 µA
Central Semiconductor Corp 1N4385 BK TIN/LEAD	Through Hole	600 V	Standard Recovery >500ns	200 mA	Axial DO-204AL DO-41	Standard	1.1 V	DO-41	10 µs	1 A	200 C	-65 C	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 1A Through Hole DO-41

Technical documentation and resources

No documents available