WN3S20H100CQ

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WeEn Semiconductors Co., Ltd

DIODE ARR SCHOT 100V 10A TO220AB

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WeEn Semiconductors Co., Ltd

DIODE ARR SCHOT 100V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	WN3S20H100CQ

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	50 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	150 ¯C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	750 mV

Part	Supplier Device Package	Technology	Speed	Operating Temperature - Junction	Current - Average Rectified (Io) (per Diode)	Package / Case	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
WeEn Semiconductors Co., Ltd WN3S20H100CQ	TO-220AB	Schottky	200 mA 500 ns	150 ¯C	10 A	TO-220-3	1 Pair Common Cathode	750 mV	Through Hole	100 V	50 µA

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General part information

Diode Array 1 Pair Common Cathode 100 V 10A Through Hole TO-220-3

Technical documentation and resources

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