VT6T1T2R

Rohm Semiconductor

PNP+PNP GENERAL PURPOSE AMPLIFIC

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Rohm Semiconductor

PNP+PNP GENERAL PURPOSE AMPLIFIC

Technical Specifications

Parameters and characteristics for this part

Specification	VT6T1T2R

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	350 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Supplier Device Package	VMT6
Transistor Type	2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

Part	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Frequency - Transition	Package / Case
Rohm Semiconductor VT6T1T2R	150 °C	100 nA	20 V	2 PNP (Dual)	Surface Mount	200 mA	120	VMT6	350 MHz	6-SMD Flat Leads

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 20V 200mA 350MHz 150mW Surface Mount VMT6

Technical documentation and resources