71V25761S166PFGI8

Obsolete

Renesas Electronics Corporation

IC SRAM 4.5MBIT PAR 100TQFP

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71V25761S166PFGI8

Obsolete

Renesas Electronics Corporation

IC SRAM 4.5MBIT PAR 100TQFP

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Technical Specifications

Parameters and characteristics for this part

Specification	71V25761S166PFGI8

Clock Frequency	166 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	128K x 36
Memory Size	4.5 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	100-LQFP
Supplier Device Package	100-TQFP (14x20)
Technology	SRAM - Synchronous, SDR
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V25761 Series

3.3V 128K x 36 Synchronous Pipelined Burst SRAM with 2.5V I/O

Part	Memory Organization	Technology	Memory Interface	Mounting Type	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Memory Format	Memory Type	Clock Frequency	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Access Time
Renesas Electronics Corporation 71V25761S166PFGI8	128K x 36	SRAM - Synchronous SDR	Parallel	Surface Mount	100-TQFP (14x20)	3.465 V	3.135 V	100-LQFP	SRAM	Volatile	166 MHz	4.5 Mbit	85 °C	-40 °C
Renesas Electronics Corporation 71V25761S166PFGI	128K x 36	SRAM - Synchronous SDR	Parallel	Surface Mount	100-TQFP (14x20)	3.465 V	3.135 V	100-LQFP	SRAM	Volatile	166 MHz	4.5 Mbit	85 °C	-40 °C
Renesas Electronics Corporation 71V25761S166BGI	128K x 36	SRAM - Synchronous SDR	Parallel	Surface Mount	119-PBGA (14x22)	3.465 V	3.135 V	119-BGA	SRAM	Volatile	166 MHz	4.5 Mbit	85 °C	-40 °C
Renesas Electronics Corporation 71V25761S166PFG8	128K x 36	SRAM - Synchronous SDR	Parallel	Surface Mount	100-TQFP (14x20)	3.465 V	3.135 V	100-LQFP	SRAM	Volatile	166 MHz	4.5 Mbit	85 °C	-40 °C
Renesas Electronics Corporation 71V25761S183PFG	128K x 36	SRAM - Synchronous SDR	Parallel	Surface Mount	100-TQFP (14x20)	3.465 V	3.135 V	100-LQFP	SRAM	Volatile	183 MHz	4.5 Mbit	70 °C	0 °C	3.3 ns
Renesas Electronics Corporation 71V25761S183PFGI8	128K x 36	SRAM - Synchronous SDR	Parallel	Surface Mount	100-TQFP (14x20)	3.465 V	3.135 V	100-LQFP	SRAM	Volatile	183 MHz	4.5 Mbit	85 °C	-40 °C	3.3 ns
Renesas Electronics Corporation 71V25761S166PFG	128K x 36	SRAM - Synchronous SDR	Parallel	Surface Mount	100-TQFP (14x20)	3.465 V	3.135 V	100-LQFP	SRAM	Volatile	166 MHz	4.5 Mbit	70 °C	0 °C
Renesas Electronics Corporation 71V25761S183PFGI	128K x 36	SRAM - Synchronous SDR	Parallel	Surface Mount	100-TQFP (14x20)	3.465 V	3.135 V	100-LQFP	SRAM	Volatile	183 MHz	4.5 Mbit	85 °C	-40 °C	3.3 ns
Renesas Electronics Corporation 71V25761S200PFG	128K x 36	SRAM - Synchronous SDR	Parallel	Surface Mount	100-TQFP (14x14)	3.465 V	3.135 V	100-LQFP	SRAM	Volatile	200 MHz	4.5 Mbit	70 °C	0 °C	3.1 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V25761 Series

The 71V25761 3.3V CMOS synchronous SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.

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