SH8K2TB1

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Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

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Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8K2TB1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10.1 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SOP
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Mounting Type	Configuration	Vgs(th) (Max) @ Id [Max]	FET Feature	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package [x]	Supplier Device Package [y]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Rohm Semiconductor SH8K2TB1	Surface Mount	2 N-Channel (Dual)	2.5 V	Logic Level Gate	MOSFET (Metal Oxide)	30 mOhm	5	6	8-SOP	6 A	2 W	150 °C	30 V	10.1 nC

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General part information

Mosfet Array 30V 6A 2W Surface Mount 8-SOP (5.0x6.0)

Technical documentation and resources