CTLDM303N-M832DS BK

Obsolete

Central Semiconductor Corp

MOSFET 2N-CH 30V 3.6A TLM832DS

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

MOSFET 2N-CH 30V 3.6A TLM832DS

Technical Specifications

Parameters and characteristics for this part

Specification	CTLDM303N-M832DS BK

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	590 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TDFN Exposed Pad
Power - Max [Max]	1.65 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TLM832DS
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.25 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Configuration
Central Semiconductor Corp CTLDM303N-M832DS BK	590 pF	3.6 A	13 nC	40 mOhm	MOSFET (Metal Oxide)	1.65 W	-55 °C	150 °C	1.25 V	TLM832DS	8-TDFN Exposed Pad	30 V	Surface Mount	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 3.6A (Ta) 1.65W Surface Mount TLM832DS

Technical documentation and resources