C4D10120A

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Wolfspeed

DIODE SIL CARB 1.2KV 33A TO220-2

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Wolfspeed

DIODE SIL CARB 1.2KV 33A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	C4D10120A

Capacitance @ Vr, F	754 pF
Current - Average Rectified (Io)	33 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed
Wolfspeed C4D10120A	SiC (Silicon Carbide) Schottky	754 pF	1.8 V	TO-220-2	1.2 kV	250 µA	33 A	Through Hole	TO-220-2	175 ░C	-55 C	No Recovery Time
Wolfspeed C4D10120H	SiC (Silicon Carbide) Schottky	754 pF	1.8 V	TO-247-2	1.2 kV	250 µA	31.5 A	Through Hole	TO-247-2	175 ░C	-55 C	No Recovery Time
Wolfspeed C4D10120E	SiC (Silicon Carbide) Schottky	754 pF	1.8 V	TO-252-2	1.2 kV	250 µA	33 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	-55 C	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 33A Through Hole TO-220-2

Technical documentation and resources