MBR40040CTR

Active

GeneSiC Semiconductor

DIODE MOD SCHOTT 40V 200A 2TOWER

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE MOD SCHOTT 40V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR40040CTR

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage @ Vr	5 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	650 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Package / Case
GeneSiC Semiconductor MBR40040CTR	40 V	1 Pair Common Anode	150 °C	-55 °C	200 A	650 mV	Chassis Mount	200 mA 500 ns	5 mA	Schottky	Twin Tower	Twin Tower
GeneSiC Semiconductor MBR40040CTRL	40 V	1 Pair Common Anode	150 °C	-55 °C	200 A	600 mV	Chassis Mount	200 mA 500 ns	3 mA	Schottky	Twin Tower	Twin Tower
GeneSiC Semiconductor MBR40040CT	40 V	1 Pair Common Cathode	150 °C	-55 °C	200 A	650 mV	Chassis Mount	200 mA 500 ns	5 mA	Schottky	Twin Tower	Twin Tower
GeneSiC Semiconductor MBR40040CTL	40 V	1 Pair Common Cathode	150 °C	-55 °C	200 A	600 mV	Chassis Mount	200 mA 500 ns	3 mA	Schottky	Twin Tower	Twin Tower

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 82.40

General part information

Diode Array 1 Pair Common Anode 40 V 200A Chassis Mount Twin Tower

Technical documentation and resources