2SA1315-Y,T6ASNF(J

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 80V 2A TO92MOD

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 80V 2A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1315-Y,T6ASNF(J

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]
Toshiba Semiconductor and Storage 2SA1315-Y,T6ASNF(J	TO-92MOD	2 A	PNP	1 µA	500 mV	TO-226-3 TO-92-3 Long Body	80 V	150 °C	Through Hole	70	900 mW
Toshiba Semiconductor and Storage 2SA1315-Y,HOF(M	TO-92MOD	2 A	PNP	1 µA	500 mV	TO-226-3 TO-92-3 Long Body	80 V	150 °C	Through Hole	70	900 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 80 V 2 A 80MHz 900 mW Through Hole TO-92MOD

Technical documentation and resources