RS1L120GNTB

NRND

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 60V, 0.0198OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HSOP-8

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NRND

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 60V, 0.0198OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, HSOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	RS1L120GNTB

Current - Continuous Drain (Id) @ 25°C	36 A, 12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1330 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3 W
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Pch -60V -56A, HSOP8, Power MOSFET

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Operating Temperature	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]
Rohm Semiconductor RS1L120GNTB	Surface Mount	1330 pF	8-PowerTDFN	MOSFET (Metal Oxide)	3 W	60 V	26 nC	N-Channel	8-HSOP	150 °C	20 V	12 A 36 A	2.7 V	4.5 V 10 V
Rohm Semiconductor RS1L151ATTB1	Surface Mount	6900 pF	8-PowerTDFN	MOSFET (Metal Oxide)	3 W	60 V	130 nC	P-Channel	8-HSOP	150 °C	20 V	56 A		4.5 V 10 V	2.5 V	11.3 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RS1L151AT is a power MOSFET, suitable for load switching applications.

Technical documentation and resources