PJQ4410P_R2_00001

Active

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Search across all available documentation for this part.

Active

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4410P_R2_00001

Current - Continuous Drain (Id) @ 25°C	10 A, 35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.1 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	27 W, 2 W
Rds On (Max) @ Id, Vgs [Max]	12 Ohm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case
Panjit International Inc. PJQ4410P_R2_00001	30 V	Surface Mount	20 V	7.1 nC	2.5 V	N-Channel	10 A 35 A	-55 °C	150 °C	2 W 27 W	DFN3333-8	12 Ohm	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerVDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 10A (Ta), 35A (Tc) 2W (Ta), 27W (Tc) Surface Mount DFN3333-8

Technical documentation and resources

No documents available