3N164

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 30V 50MA TO72

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 30V 50MA TO72

Technical Specifications

Parameters and characteristics for this part

Specification	3N164

Current - Continuous Drain (Id) @ 25°C	50 mA
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3.5 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-206AF, TO-72-4 Metal Can
Power Dissipation (Max)	375 mW
Rds On (Max) @ Id, Vgs	300 Ohm
Supplier Device Package	TO-72
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division 3N164	P-Channel	30 V	Through Hole	-55 °C	150 °C	TO-206AF TO-72-4 Metal Can	30 V	3.5 pF	TO-72	MOSFET (Metal Oxide)	375 mW	50 mA	300 Ohm	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 50mA (Ta) 375mW (Ta) Through Hole TO-72

Technical documentation and resources