AO4882

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Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 8A 8SOIC

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Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AO4882

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12 nC
Input Capacitance (Ciss) (Max) @ Vds	415 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Configuration	Technology	FET Feature	Power - Max [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AO4882	-55 °C	150 °C	40 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Logic Level Gate	2 W	Surface Mount	19 mOhm	415 pF	8-SOIC	8 A	2.4 V	12 nC	8-SOIC	3.9 mm	0.154 in
Alpha & Omega Semiconductor Inc. AO4884L_001	-55 °C	150 °C	40 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Logic Level Gate	2 W	Surface Mount		1950 pF	8-SOIC	10 A	2.7 V		8-SOIC	3.9 mm	0.154 in	33 nC	13 mOhm
Alpha & Omega Semiconductor Inc. AO4886	-55 °C	150 °C	100 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Logic Level Gate	2 W	Surface Mount		942 pF	8-SOIC	3.3 A	2.7 V	20 nC	8-SOIC	3.9 mm	0.154 in		80 mOhm

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