70T3509MS200BPI

Obsolete

Renesas Electronics Corporation

IC SRAM 36MBIT LVTTL 256CABGA

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70T3509MS200BPI

Obsolete

Renesas Electronics Corporation

IC SRAM 36MBIT LVTTL 256CABGA

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	70T3509MS200BPI

Clock Frequency	200 MHz
Memory Format	SRAM
Memory Interface	LVTTL
Memory Organization	1M x 36
Memory Size	36 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	256-BGA
Supplier Device Package	256-CABGA (17x17)
Technology	SRAM - Dual Port, Standard
Voltage - Supply [Max]	2.6 V
Voltage - Supply [Min]	2.4 V

70T3509M Series

1024K x 36 Sync, 3.3V/2.5V Dual-Port RAM

Part	Mounting Type	Memory Format	Memory Organization	Supplier Device Package	Technology	Clock Frequency	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Memory Type	Memory Size	Access Time
Renesas Electronics Corporation 70T3509MS200BPI	Surface Mount	SRAM	1M x 36	256-CABGA (17x17)	SRAM - Dual Port Standard	200 MHz	LVTTL	2.6 V	2.4 V	85 °C	-40 °C	256-BGA	Volatile	36 Gbit
Renesas Electronics Corporation 70T3509MS166BPI	Surface Mount	SRAM	1M x 36	256-CABGA (17x17)	SRAM - Dual Port Standard	166 MHz	LVTTL	2.6 V	2.4 V	85 °C	-40 °C	256-BGA	Volatile	36 Gbit
Renesas Electronics Corporation 70T3509MS133BPI	Surface Mount	SRAM	1M x 36	256-CABGA (17x17)	SRAM - Dual Port Synchronous	133 MHz	Parallel	2.6 V	2.4 V	85 °C	-40 °C	256-BGA	Volatile	36 Gbit	4.2 ns
Renesas Electronics Corporation 70T3509MS133BPG	Surface Mount	SRAM	1M x 36	256-CABGA (17x17)	SRAM - Dual Port Synchronous	133 MHz	Parallel	2.6 V	2.4 V	70 °C	0 °C	256-BGA	Volatile	36 Gbit	4.2 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

70T3509M Series

The 70T3509M is a high-speed 1024K x 36-bit synchronous dual-port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power-down feature, controlled by the Chip Enable (CE0 and CE1) permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3509M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.

Documents

Technical documentation and resources

No documents available