PJQ4407P_R1_00001

NRND

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

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NRND

Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4407P_R1_00001

Current - Continuous Drain (Id) @ 25°C	8.5 A, 30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	1169 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	27 W, 2 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Panjit International Inc. PJQ4407P_R1_00001	4.5 V 10 V	DFN3333-8	8.5 A 30 A	20 V	MOSFET (Metal Oxide)	20 mOhm	P-Channel	-55 °C	150 °C	Surface Mount	11 nC	2.5 V	8-PowerVDFN	2 W 27 W	30 V	1169 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 8.5A (Ta), 30A (Tc) 2W (Ta), 27W (Tc) Surface Mount DFN3333-8

Technical documentation and resources