VS-12FR100

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 12A DO203AA

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-12FR100

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	12 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-203AA
Supplier Device Package	DO-4
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.26 V

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Supplier Device Package	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-12FR100	12 mA	12 A	DO-203AA DO-4 Stud	1.26 V	Standard Recovery >500ns	200 mA	1000 V	175 ░C	-65 C	Chassis Stud Mount	Reverse Polarity Standard	DO-203AA	DO-4

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General part information

Diode 1000 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources