PJT7828_R1_00001

Active

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Search across all available documentation for this part.

Active

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJT7828_R1_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	0.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Supplier Device Package
Panjit International Inc. PJT7828_R1_00001	Surface Mount	1.2 Ohm	MOSFET (Metal Oxide)	-55 °C	150 °C	2 N-Channel (Dual)	300 mA	30 V	0.9 nC	350 mW	6-TSSOP SC-88 SOT-363	45 pF	1 V	SOT-363

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 300mA (Ta) 350mW (Ta) Surface Mount SOT-363

Technical documentation and resources