PJMH120N60EC_T0_00601

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Panjit International Inc.

600V/ 120MOHM / 30A/ EASY TO DRI

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Active

Panjit International Inc.

600V/ 120MOHM / 30A/ EASY TO DRI

Technical Specifications

Parameters and characteristics for this part

Specification	PJMH120N60EC_T0_00601

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1960 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	235 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-247AD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
Panjit International Inc. PJMH120N60EC_T0_00601	TO-247-3	120 mOhm	TO-247AD	MOSFET (Metal Oxide)	600 V	30 V	N-Channel	4 V	Through Hole	51 nC	30 A	10 V	-55 °C	150 °C	1960 pF	235 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 30A (Tc) 235W (Tc) Through Hole TO-247AD

Technical documentation and resources