SCT4062KWATL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 24 A, 1.2 KV, 0.081 OHM, TO-263
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SCT4062KWATL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 24 A, 1.2 KV, 0.081 OHM, TO-263
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT4062KWATL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 64 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1498 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | D2PAK (7 Leads + Tab), TO-263-8, TO-263CA |
| Rds On (Max) @ Id, Vgs | 81 mOhm |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) [Max] | 21 V |
| Vgs (Max) [Min] | -4 V |
| Vgs(th) (Max) @ Id | 4.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT4062KWA Series
SCT4062KWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Documents
Technical documentation and resources