TT8M1TR

Obsolete

Rohm Semiconductor

MOSFET N/P-CH 20V 2.5A 8TSST

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Obsolete

Rohm Semiconductor

MOSFET N/P-CH 20V 2.5A 8TSST

Technical Specifications

Parameters and characteristics for this part

Specification	TT8M1TR

Configuration	N and P-Channel
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	3.6 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	8-TSST
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Configuration	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Mounting Type	Operating Temperature	FET Feature	FET Feature	Power - Max [Max]
Rohm Semiconductor TT8M1TR	N and P-Channel	1 V	260 pF	20 V	3.6 nC	72 mOhm	MOSFET (Metal Oxide)	8-TSST	Surface Mount	150 °C	Logic Level Gate	1.5 V	1 W

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General part information

Mosfet Array 20V 2.5A 1W Surface Mount 8-TSST

Technical documentation and resources