VFT5200-E3/4W

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 5A TO220-3

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	VFT5200-E3/4W

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	150 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Mounting Type	Technology	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VFT5200-E3/4W	Through Hole	Schottky	200 mA 500 ns	150 °C	-40 °C	1.6 V	TO-220-3	TO-220-3	5 A	200 V	150 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	2000	$ 0.34

General part information

Diode 200 V 5A Through Hole TO-220-3

Technical documentation and resources