NXPSC04650DJ

Obsolete

WeEn Semiconductors Co., Ltd

DIODE SIL CARBIDE 650V 4A DPAK

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NXPSC04650DJ

Obsolete

WeEn Semiconductors Co., Ltd

DIODE SIL CARBIDE 650V 4A DPAK

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NXPSC04650DJ

Capacitance @ Vr, F	130 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	170 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

NXPSC Series

Part	Package / Case	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Speed	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Current - Average Rectified (Io) (per Diode)	Diode Configuration
WeEn Semiconductors Co., Ltd NXPSC08650BJ	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	260 pF	1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	230 µA	175 °C	D2PAK	650 V	Surface Mount	8 A
WeEn Semiconductors Co., Ltd NXPSC04650DJ	DPAK (2 Leads + Tab) SC-63 TO-252-3	130 pF	1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	170 µA	175 °C	DPAK	650 V	Surface Mount	4 A
WeEn Semiconductors Co., Ltd NXPSC166506Q	TO-220-2	534 pF	1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	100 µA	175 °C	TO-220AC	650 V	Through Hole	16 A
WeEn Semiconductors Co., Ltd NXPSC086506Q	TO-220-2	260 pF	1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	230 µA	175 °C	TO-220AC	650 V	Through Hole	8 A
WeEn Semiconductors Co., Ltd NXPSC04650X6Q	TO-220-2 Full Pack Isolated Tab	130 pF	1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	170 µA	175 °C	TO-220F	650 V	Through Hole	4 A
WeEn Semiconductors Co., Ltd NXPSC20650W6Q	TO-247-3		1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	250 µA	175 °C	TO-247-3	650 V	Through Hole		20 A	1 Pair Common Cathode
WeEn Semiconductors Co., Ltd NXPSC08650DJ	DPAK (2 Leads + Tab) SC-63 TO-252-3	260 pF	1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	230 µA	175 °C	DPAK	650 V	Surface Mount	8 A
WeEn Semiconductors Co., Ltd NXPSC046506Q	TO-220-2	130 pF	1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	170 µA	175 °C	TO-220AC	650 V	Through Hole	4 A
WeEn Semiconductors Co., Ltd NXPSC06650X6Q	TO-220-2 Full Pack Isolated Tab	190 pF	1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	200 µA	175 °C	TO-220F	650 V	Through Hole	6 A
WeEn Semiconductors Co., Ltd NXPSC10650B6J	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	300 pF	1.7 V	No Recovery Time	SiC (Silicon Carbide) Schottky	250 µA	175 °C	D2PAK	650 V	Surface Mount	10 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NXPSC Series

Diode 650 V 4A Surface Mount DPAK

Documents

Technical documentation and resources

No documents available