1N6097

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GeneSiC Semiconductor

DIODE SCHOTTKY 30V 50A DO5

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GeneSiC Semiconductor

DIODE SCHOTTKY 30V 50A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N6097

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If [Max]	700 mV

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Supplier Device Package	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
GeneSiC Semiconductor 1N6097	700 mV	200 mA 500 ns	DO-5	Schottky	150 °C	-65 C	DO-203AB DO-5 Stud	Chassis Stud Mount	5 mA	30 V	50 A

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General part information

Diode 30 V 50A Chassis, Stud Mount DO-5

Technical documentation and resources