VS-123NQ100PBF

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 120A D-67

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 120A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	VS-123NQ100PBF

Capacitance @ Vr, F	2650 pF
Current - Average Rectified (Io)	120 A
Current - Reverse Leakage @ Vr	3 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D-67 HALF-PAK
Speed	200 mA, 500 ns
Supplier Device Package	D-67 HALF-PAK
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	910 mV

Part	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed
Vishay General Semiconductor - Diodes Division VS-123NQ100PBF	Schottky	175 ░C	-55 C	3 mA	910 mV	D-67 HALF-PAK	120 A	2650 pF	Chassis Mount	100 V	D-67 HALF-PAK	200 mA 500 ns
Vishay General Semiconductor - Diodes Division 123NQ100	Schottky			3 mA	910 mV	D-67 HALF-PAK	120 A	2650 pF	Chassis Mount	100 V	D-67 HALF-PAK	200 mA 500 ns

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General part information

Diode 100 V 120A Chassis Mount D-67 HALF-PAK

Technical documentation and resources