AO4840

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 6A 8SOIC

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Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 6A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AO4840

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10.8 nC
Input Capacitance (Ciss) (Max) @ Vds	650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Drain to Source Voltage (Vdss)	FET Feature	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Alpha & Omega Semiconductor Inc. AO4840	30 mOhm	2 W	650 pF	8-SOIC	3.9 mm	0.154 in	Surface Mount	40 V	Logic Level Gate	3 V	6 A	MOSFET (Metal Oxide)	10.8 nC	2 N-Channel (Dual)	-55 °C	150 °C	8-SOIC
Alpha & Omega Semiconductor Inc. AO4840E	28 mOhm	2 W		8-SOIC	3.9 mm	0.154 in	Surface Mount	40 V		2.6 V	6 A	MOSFET (Metal Oxide)		2 N-Channel (Dual)	-55 °C	150 °C	8-SOIC	520 pF	10 nC

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