IXFN80N50Q2

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IXYS

MOSFET N-CH 500V 72A SOT227B

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IXYS

MOSFET N-CH 500V 72A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN80N50Q2

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	890 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
IXYS IXFN80N50Q2	N-Channel	72 A	4.5 V	-55 °C	150 °C	Chassis Mount	500 V	890 W	MOSFET (Metal Oxide)	30 V	SOT-227-4 miniBLOC	10 V	SOT-227B	60 mOhm
IXYS IXFN80N48	N-Channel		4 V	-55 °C	150 °C	Chassis Mount	480 V		MOSFET (Metal Oxide)	20 V	SOT-227-4 miniBLOC	10 V	SOT-227B	45 mOhm	9890 pF	380 nC	700 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 72A (Tc) 890W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

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