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IXFN100N50Q3 - IXYK1x0xNxxxx

IXFN100N50Q3

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IXYS

MOSFET N-CH 500V 82A SOT227B

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IXFN100N50Q3 - IXYK1x0xNxxxx

IXFN100N50Q3

Active
IXYS

MOSFET N-CH 500V 82A SOT227B

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFN100N50Q3
Current - Continuous Drain (Id) @ 25°C82 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs255 nC
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-227-4, miniBLOC
Power Dissipation (Max)960 W
Rds On (Max) @ Id, Vgs49 mOhm
Supplier Device PackageSOT-227B
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id6.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 300$ 43.43

Description

General part information

IXFN100 Series

N-Channel 500 V 82A (Tc) 960W (Tc) Chassis Mount SOT-227B

Documents

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