IXFN34N80

NRND

IXYS

MOSFET N-CH 800V 34A SOT-227B

Search across all available documentation for this part.

NRND

IXYS

MOSFET N-CH 800V 34A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN34N80

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7500 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	600 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXFN34N80	SOT-227B	600 W	34 A	SOT-227-4 miniBLOC	MOSFET (Metal Oxide)	800 V	N-Channel	10 V	Chassis Mount	5 V	7500 pF	-55 °C	150 °C	20 V	270 nC	240 mOhm
IXYS IXFN34N100	SOT-227B		34 A	SOT-227-4 miniBLOC	MOSFET (Metal Oxide)	1000 V	N-Channel	10 V	Chassis Mount	5.5 V		-55 °C	150 °C	20 V			700 W	380 nC	280 mOhm	9200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	10	$ 28.79

General part information

N-Channel 800 V 34A (Tc) 600W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available