SI4800,518

Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 30V 9A 8SO

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Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 30V 9A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4800,518

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.8 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	18.5 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	800 mV

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Freescale Semiconductor - NXP SI4800,518	18.5 mOhm	800 mV	N-Channel	4.5 V 10 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	8-SO	9 A	30 V	-55 °C	150 °C	20 V	2.5 W	11.8 nC	MOSFET (Metal Oxide)
Freescale Semiconductor - NXP SI4420DY,518	9 mOhm	1 V	N-Channel	4.5 V 10 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	8-SO	12.5 A	30 V	-55 °C	150 °C	20 V	2.5 W		MOSFET (Metal Oxide)	120 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 9A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources

No documents available